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| TIC226D Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Triacs | |||
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC226D
FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
400
V
Repetitive peak reverse voltage
400
V
RMS on-state current (full sine wave)TC=85â
8
A
Non-repetitive peak on-state current
70
A
Operating junction temperature
110
â
Storage temperature
-45~150 â
Thermal resistance, junction to case
1.8 â/W
Thermal resistance, junction to ambient
62.5 â/W
ELECTRICAL CHARACTERISTICS (TC=25â unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX UNIT
IDRM Repetitive peak off-state current VD=VDRM, TC=110â
â
2.0 mA
2 50
IGT Gate trigger current
â
¡
Vsupply = 12 Vâ ; RL= 10Ω; tp(g) >20μs
â
¢
12 50
mA
9 50
â
£
20
IH
Holding current
Vsupply = 12 Vâ ,IG= 0 initial ITM=100mA
VGT
Gate trigger voltageall quadrant Vsupply = 12 Vâ ; RL= 10Ω; tp(g) >20μs
VTM On-state voltage
IT= 12A; IG= 50mA
30 mA
2V
2.1 V
isc websiteï¼www.iscsemi.cn
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