TIC216M Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Triacs

INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC216M
FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max I_GT of 5 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
V_DRM
V_RRM
I_T(RMS)
I_TSM
T_j
T_stg
R_th(j-c)
R_th(j-a)
Repetitive peak off-state voltage
600
V
Repetitive peak reverse voltage
600
V
RMS on-state current (full sine wave)T_C=70℃
6
A
Non-repetitive peak on-state current
60
A
Operating junction temperature
110
℃
Storage temperature
-45~150 ℃
Thermal resistance, junction to case
2.5 ℃/W
Thermal resistance, junction to ambient
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (T_C=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
I_DRM Repetitive peak off-state current V_D=V_DRM, TC=110℃
Ⅰ
I_GT Gate trigger current
Ⅱ
V_supply = 12 V†; R_L= 10Ω; t_p(g) >20μs
Ⅲ
Ⅳ
I_H
Holding current
V_supply = 12 V†, I_G= 0 initial I_TM= 100mA
Ⅰ
V_GT Gate trigger voltage
Ⅱ
V_supply = 12 V†; R_L= 10Ω; t_p(g) >20μs
Ⅲ
Ⅳ
V_TM On-state voltage
I_T= 8.4A; I_G= 50mA
MAX UNIT
2.0 mA
5
5
mA
5
10
30 mA
2.2
2.2
V
2.2
3.0
1.7
V
isc website：www.iscsemi.cn