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| TIC126M Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Thyristors | |||
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INCHANGE Semiconductor
isc Thyristors
isc Product Specification
TIC126M
APPLICATIONS
·12A contimunous on-state current
·100A surge-current
·Glass passivated
·Max IGT of 20mA
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VDRM
VRRM
IT(AV)
IT(RMS)
ITM
PGM
PG(AV)
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
On-state current Tc=80â
RMS on-state current Tc=80â
Surge peak on-state current
Peak gate power PWâ¤300μs
Average gate power
Operating Junction temperature
Storage temperature
Thermal resistance, junction to case
Thermal resistance, junction to ambient
MIN
600
600
7.5
12
100
5
1
110
-40 ~+125
2.4
62.5
UNIT
V
V
A
A
A
W
W
â
â
â/W
â/W
ELECTRICAL CHARACTERISTICS (TC=25â unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM, Tj=110â
IDRM Repetitive peak off-state current VRM=VRRM, Tj=110â
2.0 mA
2.0 mA
VTM On-state voltage
IGT Gate-trigger current
VGT Gate-trigger voltage
IH
Holding current
ITM= 12A
VAA=6V; RL=100Ω
VAA=6V; RL=100Ω
VAA=6V; RGK=1kΩ,IT=100mA
1.4 V
20 mA
1.5 V
40 mA
isc websiteï¼www.iscsemi.cn
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