 English |
|
|
|
|
|
|
|
| TIC106D Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Thyristors | |||
| |||
|
INCHANGE Semiconductor
isc Thyristors
isc Product Specification
TIC106D
APPLICATIONS
·5A contimunous on-state current
·30A surge-current
·Glass passivated
·Max IGT of 200μA
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VDRM
VRRM
IT(AV)
IT(RMS)
ITM
PGM
PG(AV)
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
On-state current Tc=80â
RMS on-state current Tc=80â
Surge peak on-state current
Peak gate power PWâ¤300μs
Average gate power
Operating Junction temperature
Storage temperature
Thermal resistance, junction to case
Thermal resistance, junction to ambient
MIN
400
400
3.2
5
30
1.3
0.3
110
-40 ~+125
1.9
62.5
UNIT
V
V
A
A
A
W
W
â
â
â/W
â/W
ELECTRICAL CHARACTERISTICS (TC=25â unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IRRM
IDRM
VTM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
VRM=VRRM,
VRM=VRRM, Tj=110â
VDM=VDRM,
VDM=VDRM, Tj=110â
ITM= 5A
0.4
1.0
mA
0.4
1.0
mA
1.7 V
IGT Gate-trigger current
VAA=6V; RL=1kΩ
200 μA
VGT Gate-trigger voltage
VAA=6V; RL=100Ω
1.0 V
IH
Holding current
VAA=6V; RGK=1kΩ, IT= 10mA
5 mA
isc websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese