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| T430 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
T430
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High DC Current Gain
: hFE= 800(Min.)@ IB= 4A
·Low Collector Saturation Voltage
: VCE(sat)= 1.5V(Max.)@ IC= 3A
APPLICATIONS
·Switching for dynamotor excitation
·Automotive ignition
·Switching regulator
·Motor control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
100
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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