STP180N10F3 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
STP180N10F3
DESCRIPTION
·Ultra low on-resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
100
V
±20
V
Drain Current-continuous@ TC=25℃
120
ID
A
Drain Current-continuous@ TC=100℃
120
IDM
Drain Current-Single Plused
480
A
Ptot
Total Dissipation@TC=25℃
315
W
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.48 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
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