ST26025A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
ST26025A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·High DC Current Gain-
: hFE= 750(Min.)@IC= -10A
·Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continunous
-20
A
IB
Base Current-Continunous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
-1
A
160
W
200
℃
Tstg
Storage Temperature Range
-55~+200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
0.87
UNIT
℃/W
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