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| SGSF313PI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed to be used as switch in high efficency off-line
(220V mains) switching power supplies for consumer
applications like sets VCRâs and monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
VCEX
VCES
Collector-Emitter Voltage
(VBE= -2.5V)
Collector-Emitter Voltage
(VBE=0)
1000
1000
VCEO Collector-Emitter Voltage
450
VEBO Emitter-Base Voltage
10
IC
Collector Current-Continuous
7
ICM
Collector Current-Peak
10
IBB
Base Current
3
IBM
Base Current-Peak
6
PD
Total Power Dissipation
@TC=25â
35
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
UNIT
V
V
V
V
A
A
A
A
W
â
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance,Junction to Case 3.57 â/W
isc Product Specification
SGSF313PI
isc Websiteï¼www.iscsemi.cn
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