SFT1202 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
SFT1202
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A)
·Fast -Switching speed
·High allowable power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·DC/DC converter
·Relay dirvers
·Lamp dirvers
·Motor dirvers，inverter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
180
V
150
V
7
V
2
A
3
A
0.4
A
1
W
15
150
℃
-55~150 ℃
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