S8025R Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – Thyristors

INCHANGE Semiconductor
isc Thyristors
isc Product Specification
S8025R
 DESCRIPTION
·Electrically-isolated package
·High Vdrm and Vrrm.
·High temperature stability.
APPLICATIONS
·It is suitable to fit all modes of control applications.
such as Solid State Relays,Heating controller,Phased
circuits,motor control circuits in electric tools and cleaner.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average on-stage current
IT(RMS) RMS on-state current
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
TC=80℃
TC=105℃
Tj=125℃
MIN
800
800
25
250
1
-40~125
-40~150
UNIT
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current VRM=VRRM, ,
IDRM Repetitive peak off-state current VDM=VDRM,
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
VTM On-state voltage
ITM= 75A
IGT
Gate-trigger current
VD= 12V; RL=100Ω
VGT Gate-trigger voltage
VD= 12V; RL=100Ω
IH
Holding current
IT= 0.5A; Gate Open
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
5 μA
1 mA
5 μA
1 mA
1.4 V
30 mA
1.5 V
60 mA
2.05 ℃/W
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