S2818A Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN TRIPPLE DIFFUSED MESA TYPE

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
S2818A
DESCRIPTION
·High Voltage
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES Collector-Emitter Voltage
1500
V
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-peak
I_BM
Base Current-peak
Collector Power Dissipation
P_C
@ T_C≤95℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
5
V
5
A
7.5
A
4
A
12.5
W
115
℃
-65~115
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.6 ℃/W
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