S2056 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
S2056
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
V_CER
Collector-Emitter Voltage
V_BE= 0
Collector-Emitter Voltage
R_BE= 100Ω
1500
V
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current
2.5
A
I_CM
Collector Current-peak
3
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_C≤90℃
T_J
Junction Temperature
0.1
A
10
W
115
℃
T_stg
Storage Temperature Range
-65~115
℃
isc Website：www.iscsemi.cn