PMD16K60 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
PMD16K60/80/100
DESCRIPTION
With TO-3 package
High DC current gain
DARLINGTON
APPLICATIONS
Designed for use in power switching
application.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
PMD16K60
V_CBO
Collector-base voltage PMD16K80 Open emitter
PMD16K100
PMD16K60
V_CEO
Collector-emitter voltage PMD16K80 Open base
PMD16K100
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current(peak)
I_B
Base current
P_D
Power dissipation
T_C=25
T_j
Max. operating Junction temperature
T_stg
Storage temperature
VALUE
60
80
100
60
80
100
5
20
40
0.5
200
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
MAX
0.875
UNIT
/W