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| PMD1603K Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor | |||
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
PMD1603K
DESCRIPTION
·High DC current gain
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min)
·Complement to type PMD1703K
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IBB
Base Current
0.5
A
PC
Collector Power Dissipation@TC=25â
180
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX UNIT
0.97 â/W
isc Websiteï¼www.iscsemi.cn
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