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PMD13K80 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlingtion Power Transistor | |||
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
PMD13K80
DESCRIPTION
·High DC current gain
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -80V(Min)
·Complement to type PMD12K80
APPLICATIONS
·Designed for general purpose amplifier and DC motor control
applications.
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current -Continuous
-8
A
ICP
Collector Current-Peak
-16
A
IBB
Base Current
-0.12
A
PC
Collector Power Dissipation@TC=50â
100
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX UNIT
1.5 â/W
isc Websiteï¼www.iscsemi.cn
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