NJD2873 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
NJD2873
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA)
·DC Current Gain -hFE = 120(Min)@ IC= 0.5A
·High Current-Gain—Bandwidth Product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current
Total Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
Ta=25℃
TJ
Junction Temperature
2
A
3
A
0.4
A
15
W
1.68
150
℃
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
Rth j-c Thermal Resistance, Junction to Case
10
Rth j-a
Thermal
Ambient
Resistance,Junction
to
89.3
℃
℃/W
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}