NJD1718 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
NJD1718
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A)
·High Switching speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-gain audio amplifier and power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Total Power Dissipation
@ TC=25℃
Collector Power Dissipation
Ta=25℃
Junction Temperature
-50
V
-50
V
-5
V
-2
A
-3
A
-0.4
A
15
W
1.68
150
℃
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBO
L
PARAMETER
MAX
Rth j-c Thermal Resistance, Junction to Case
10
℃
UNIT
℃/W
Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W
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