MUR3060WT Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – ULTRAFAST PLASTIC RECTIFIER

Ultrafast Rectifier
INCHANGE Semiconductor
MUR3060WT
FEATURES
·Guarding for over voltage protection
·Dual rectifier construction,positive center tap
·Metal of silicon rectifier,majority carrier conduction
·Low forward voltage,high efficiency
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Rectifier in switch mode supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current Per Leg
Total device
15
30
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
PD
Maximum power dissipation
100
W
TJ
Junction Temperature
-40~175 ℃
Tstg
Storage Temperature Range
-40~175 ℃
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