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| MUR3030PT Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Ultrafast Recovery Rectifier | |||
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INCHANGE Semiconductor
Ultrafast Recovery Rectifier
Product Specification
MUR3030PT
FEATURES
·Ultrafast Recovery Time
·Low Forward Voltage
·Low Leakage Current
·175â Operating Junction Temperature
·High Temperature Glass Passivated Junction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260â Max.
for 10 Seconds
APPLICATIONS
·Designed for use in switching power supplies, inverters and as
free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRW M
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
300
V
IF(AV)
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
15
30
A
Peak Repetitive Forward Current (Rated
IFM
VR,
30
A
Square Wave,20kHz)
Per Diode Leg
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-65~175 â
Tstg
Storage Temperature Range
-65~175 â
isc websiteï¼www.iscsemi.cn
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