MUR30120CT Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Recovery Rectifier

INCHANGE Semiconductor
Fast Recovery Rectifier
Product Specification
MUR30120CT
FEATURES
·Ultrafast Recovery Time
·Low Forward Voltage
·Low Leakage Current
·150℃ Operating Junction Temperature
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
APPLICATIONS
·Designed for use in switching power supplies, inverters and as
free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
1200
V
IF(AV)
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
15
30
A
IFM
Peak Repetitive Forward Current (Rated VR,
Square Wave,20kHz)
Per Diode Leg
30
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
300
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}