English
Language : 

MUR30120 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Ultra Fast Recovery Diodes
INCHANGE Semiconductor
Ultrafast Recovery Rectifier
Product Specification
MUR30120
FEATURES
·Ultrafast Recovery Time
·Low Forward Voltage
·Low Leakage Current
·175℃ Operating Junction Temperature
·High Temperature Glass Passivated Junction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
APPLICATIONS
·Designed for use in switching power supplies, inverters and
as free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRW M
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
1200
V
30
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz)
30
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions
300
A
half-wave, single phase, 60Hz)
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.cn
1