MUR20120 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Ultrafast Rectifier

Ultrafast Rectifier
INCHANGE Semiconductor
MUR20120
FEATURES
·1200V blocking voltage
·Very short recovery time
·Soft recovery behaviour
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Antiparallel diode for high frequency switching devices
·Antisaturation diode
·Snubber diode
·Free wheeling diode in converters and motor control circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current@45℃
IFSM
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
TJ
Junction Temperature
VALUE UNIT
1200
V
17
A
140
A
-40~150 ℃
Tstg
Storage Temperature Range
-40~150 ℃
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