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MTP50N06V Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
MTP50N06V
FEATURES
·Drain Current –ID=42A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max)
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
60
V
±20
V
ID
Drain Current-Continuous
42
A
IDM
Drain Current-Single Pluse (tp≤10μs)
147
A
PD
Total Dissipation @TC=25℃
125
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.2
62.5
UNIT
℃/W
℃/W
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