MJF18008 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF18008
DESCRIPTION
With TO-220F package
High voltage ,high speed
APPLICATIONS
Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
1000
450
9
10
16
4
8
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
R_{th j-A}
Thermal resistance junction to ambient
VALUE
2.78
62.5
UNIT
/W
/W