MJE8503 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CEV Collector-Emitter Voltage
1400
V
V_CEO(SUS) Collector-Emitter Voltage
800
V
V_EBO Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
10
A
I_B
Base Current-Continuous
4
A
I_BM
Base Current-Peak
8
A
P_C
Collector Power Dissipation@T_C=25℃
80
W
T_J
Junction Temperature
125
℃
T_stg
Storage Temperature
-65~125 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc Product Specification
MJE8503
isc website：www.iscsemi.cn
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