MJE800 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Monolithic Construction With Built-in Base- Emitter Resistors

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-126 package
Complement to type MJE700/701/702/703
High DC current gain
DARLINGTON
APPLICATIONS
Designed for general–purpose amplifier
and low–speed switching applications
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Product Specification
MJE800/801/802/803
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
MJE800/801
MJE802/803
Open emitter
V_CEO
Collector-emitter voltage
MJE800/801
MJE802/803
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
60
80
60
80
5
4
0.1
40
150
-55~150
UNIT
V
V
V
A
A
W