MJE521 Datasheet, PDF (1/2 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE521
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 40 V(Min)
·DC Current Gain-
: hFE = 40(Min) @ IC= 1A
·Complement to Type MJE371
APPLICATIONS
·Designed for use in general−purpose amplifier and
switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
2
A
40
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.12 ℃/W
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