MJE51T Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE51T
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 250V(Min)
APPLICATIONS
·Designed for high voltage inverters, switching regulators
and line operated amplifier applications. Especially well
suited for switching power supply applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO
Collector-Base Voltage
350
V_CEO
Collector-Emitter Voltage
250
V_EBO
Emitter-Base Voltage
6
I_C
Collector Current-Continuous
5
I_CM
Collector Current-Peak
10
I_BB
Base Current-Continuous
2
P_C
Collector Power Dissipation
@ T_C=25℃
80
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.56
UNIT
℃/W
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