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| MJE371 Datasheet, PDF (1/2 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE371
DESCRIPTION
·CollectorâEmitter Sustaining Voltageâ
: VCEO(SUS) = -40V
·DC Current Gainâ
: hFE = 40(Min) @ IC= -1A
·Complement to Type MJE521
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
circuits.
·Recommended for use in 5~20 Watt audio amplifiers utilizing
complementary symmetry circuitry.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-peak
-8
A
IBB
Base Current
PC
Collector Power Dissipation
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
-2
A
40
W
150
â
-65~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.12 â/W
isc Websiteï¼www.iscsemi.cn
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