MJE182 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage—
: V_CEO(SUS) = 80 V
·DC Current Gain—
: h_FE = 30(Min) @ I_C= 0.5 A
= 12(Min) @ I_C= 1.5 A
·Complement to Type MJE172
APPLICATIONS
·Low power audio amplifier
·Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
80
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
3
A
I_CM
Collector Current-peak
6
A
I_BB
Base Current
Collector Power Dissipation
P_C
T_a=25℃
Collector Power Dissipation
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
1
A
1.5
W
12.5
150
℃
-65~150
℃
isc Product Specification
MJE182
isc Website：www.iscsemi.cn