MJE171 Datasheet, PDF (1/2 Pages) Motorola, Inc – 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage—
: V_CEO(SUS) = -60V
·DC Current Gain—
: h_FE = 30(Min) @ I_C= -0.5 A
= 12(Min) @ I_C= -1.5 A
·Complement to Type MJE181
APPLICATIONS
·Low power audio amplifier applications.
·Low current high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-80
V
V_CEO Collector-Emitter Voltage
-60
V
V_EBO Emitter-Base Voltage
-7
V
I_C
Collector Current-Continuous
-3
A
I_CM
Collector Current-peak
-6
A
I_BB
Base Current
Collector Power Dissipation
P_C
T_a=25℃
Collector Power Dissipation
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
-1
A
1.5
W
12.5
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
10 ℃/W
Thermal Resistance,Junction to Ambient 83.4 ℃/W
isc Product Specification
MJE171
isc Website：www.iscsemi.cn