MJE15032 Datasheet, PDF (1/2 Pages) Motorola, Inc – 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE15032
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 250V(Min)
·DC current gain -
: h_FE = 50 (Min) @I_C= 0.5 A
: h_FE = 10 (Min) @I_C= 2.0 A
·Complement to Type MJE15033
APPLICATIONS
·Designed for use as high–frequency drivers in audio
amplifiers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
250
V
V_CEO Collector-Emitter Voltage
250
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
8
A
I_CM
Collector Current-Peak
16
A
I_BB
Base Current
Collector Power Dissipation
P_C
@T_a=25℃
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature
2
A
2
W
50
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
2.5 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn