MJE13005F Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER, FLUORESCENT LIGHT BALLSTOR)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.6(Max) @ IC= 2.0A
·Switching Time
: tf= 0.9μs(Max.)@ IC= 2.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VALUE
700
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
9
IC
Collector Current-Continuous
4
ICM
Collector Current-peak
8
IB
Base Current
2
IBM
Base Current-Peak
4
IE
Emitter Current
6
IEM
Emitter Current-Peak
12
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
2
75
Ti
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT
1.67 ℃/W
62.5 ℃/W
isc Product Specification
MJE13005F
isc website：www.iscsemi.com
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