MJE13003D Datasheet, PDF (1/2 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

INCHANGE Semiconductor
Silicon NPN Power Transistor
Product Specification
MJE13003D
DESCRIPTION
·High Voltage Capability
·High Speed Switching
·Wide Area of Safe Operation
APPLICATIONS
·Fluorescent lamp
·Electronic ballast
·Electronic transformer
·Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
700
V
V_CEO Collector-Emitter Voltage
400
V
V_EBO Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature
2
A
40
W
150
℃
-65~150 ℃