MJE13002 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,300-400V,40W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13002
DESCRIPTION
With TO-126 package
High voltage ,high speed
APPLICATIONS
Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-Peak
I_E
Emitter current
I_EM
Emitter current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
VALUE
600
300
9
1.5
3
0.75
1.5
2.25
4.5
40
150
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
MAX
3.12
UNIT
/W