MJE12007 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-220 package
High voltage
Low saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
Fluorescent lamp ballasts
Inverters
Solenoid and relay drivers
Motor controls
Deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
Product Specification
MJE12007
VALUE
1500
750
9
2.5
5
80
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.56
UNIT
/W