MJD6039 Datasheet, PDF (1/2 Pages) ON Semiconductor – Darlington Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD6039
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·High DC Current Gain-
: hFE = 500(Min)@IC= 2A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current
Collector Power Dssipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.1
A
20
W
1.75
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
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