MJD5731 Datasheet, PDF (1/2 Pages) ON Semiconductor – High Voltage PNP Silicon Power Transistors

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJD5731
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -350V(Min)
·High Switching speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for line operated audio output amplifier
SWITCHMODE power supply drivers and other
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
VEBO
IC
ICM
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Total Power Dissipation
@ TC=25℃
Collector Power Dissipation
Ta=25℃
Junction Temperature
-350
V
-5
V
-1.0
A
-3.0
A
15
W
1.56
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBO
L
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
8.33 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80
℃/W
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