MJD50 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD50
DESCRIPTION
·DC Current Gain -hFE = 30~150@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.0
A
ICM
Collector Current-Peak
2.0
A
IB
Base Current
Collector Power Dissipation
TC=25℃
PD
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
0.6
A
15
W
1.56
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX
8.33
80
UNIT
℃/W
℃/W
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