MJD44H11 Datasheet, PDF (1/3 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD44H11
DESCRIPTION
·Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A
·Fast Switching Speeds
·Complement to Type MJD45H11
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
16
A
20
W
1.75
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
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