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MJD41C Datasheet, PDF (1/3 Pages) ON Semiconductor – Complementary Power Transistors | |||
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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD41C
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type MJD42C
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
TC=25â
PC
Collector Power Dissipation
Ta=25â
Tj
Junction Temperature
2
A
20
W
1.75
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 â/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 â/W
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