MJD350 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – High Voltage Power Transistors D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJD350
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = -300 V(Min)
·Low Collector Saturation Voltage-
: VCE(sat) = -1.0V(Max.)@ IC= -50mA
·DPAK for Surface Mount Applications
·Complement to Type MJD340
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for line operated audio output amplifier,
switchmode power supply drivers and other switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-3
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Ti
Junction Temperature
-0.5
A
-0.75
A
15
W
1.56
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBO
L
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.33 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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