MJD340 Datasheet, PDF (1/2 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD340
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
·Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max.)@ IC= 50mA
·DPAK for Surface Mount Applications
·Complement to Typ MJD350
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications..
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
0.75
A
15
W
1.56
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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