MJD32C Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

isc Silicon PNP Power Transistors
INCHANGE Semiconductor
MJD32C
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= -1A
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= -100V(Min)
·Complement to Type MJD31C
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
VCEO
VEBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-100
V
-100
V
-5
V
IC
Collector Current-Continuous
ICM
Collector Current-Pulse
IB
Base Current
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-3
A
-5
A
-1
A
15
W
1.56
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.3 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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