MJD31C Datasheet, PDF (1/3 Pages) ON Semiconductor – SILICON POWER TRANSISTORS

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD31C
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= 1A
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
·Complement to Type MJD32C
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
Collector Power Dissipation
TC=25℃
Collector Power Dissipation
Ta=25℃
Junction Temperature
100
V
100
V
5
V
3
A
5
A
1
A
15
W
1.56
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.3 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
isc Website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}