MJD3055 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD3055
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJD2955
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
6
A
Collector Power Dissipation@TC=25℃
20
PC
W
Collector Power Dissipation@Ta=25℃ 1.75
Tj
Junction Tmperature
Tstg
Storage Temperature Range
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
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