MJD253 Datasheet, PDF (1/3 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJD253
DESCRIPTION
·High DC Current Gain-
: hFE = 40(Min) @ IC= -0.2 A
·Low Collector Saturation Voltage-
: VCE(sat) = -0.3V(Max.)@ IC= -0.5 A
·Complement to the NPN MJD243
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for low voltage, low -power ,high-gain audio
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-8
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
-1
A
1.4
W
12.5
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W
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