MJD148 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
MJD148
DESCRIPTION
·DC Current Gain-
: hFE = 85(Min) @ IC= 0.5A
·Low Collector Saturation Voltage-
: VCE(sat) = 0.5V(Max.)@ IC= 2A
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
7
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
50
mA
1.75
W
20
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
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