MJD128 Datasheet, PDF (1/2 Pages) ON Semiconductor – Complementary Darlington Power Transistor

isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min)
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
ICM
Collector Current-Peak
-16
IB
Base Current-DC
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-120
20
1.75
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
mA
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
isc Product Specification
MJD128
isc website：www.iscsemi.com
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