MJD122 Datasheet, PDF (1/2 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
MJD122
DESCRIPTION
·Low Collector-Emitter saturation voltage
·Lead formed for surface mount applications
·High DC current gain
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
PC
PC
Rth j-a
Total Power Dissipation
@ Ta=25℃
Collector Power Dissipation
TC=25℃
Thermal Resistance,Junction to
Ambient
1.75
20
71.4
TJ
Junction Temperature
150
A
W
W
℃/W
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}